IRF9530NPBF Datasheet

IRF9530NPBF

Datasheet specifications

Datasheet's name IRF9530NPBF
File size 71.291 KB
File type pdf
Number of pages 9

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Technical specifications

  • RoHS: true
  • Type: P Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Infineon Technologies IRF9530NPBF
  • Operating Temperature: -55°C~+175°C@(Tj)
  • Power Dissipation (Pd): 79W
  • Total Gate Charge (Qg@Vgs): 58nC@10V
  • Drain Source Voltage (Vdss): 100V
  • Input Capacitance (Ciss@Vds): 760pF@25V
  • Continuous Drain Current (Id): 14A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 200mΩ@10V,8.4A
  • Package: TO-220
  • Manufacturer: Infineon Technologies

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